Dawei Bi - researchr alias

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Viewing Publication 1 - 17 from 17

2023

A highly stable and low-cost 12T radiation hardened SRAM cell design for aerospace applicationZhongyang Liu, Yuqiao Xie, Tao Xu, Qing Liu, Dawei Bi, Zhiyuan Hu, Shichang Zou, Zhengxuan Zhang. ijcta, 51(8):3938-3948, August 2023. [doi]

A novel high-precision single-event transient hardened voltage comparator designYuqiao Xie, Zhongyang Liu, Tao Xu, Dawei Bi, Zhiyuan Hu, Zhengxuan Zhang, Shichang Zou. ijcta, 51(10):4864-4878, October 2023. [doi]

An energy-efficient level shifter based on a differential cascade voltage switch structureHaineng Zhang, Zhongyang Liu, Dawei Bi, Zhengxuan Zhang, Zhiyi Xiao, Ruofan Dai. ijcta, 51(2):955-962, February 2023. [doi]

2020

Substrate effect on radiation-induced charge trapping in buried oxide for partially-depleted SOI NMOSFETHuilong Zhu, Dawei Bi, Xin Xie, Zhiyuan Hu, Zhengxuan Zhang, Shichang Zou. ieiceee, 17(7):20200001, 2020. [doi]

2019

Radiation-enhanced channel length modulation induced by trapped charges in buried oxide layerXin Xie, Huilong Zhu, Mengying Zhang, Dawei Bi, Zhiyuan Hu, Zhengxuan Zhang, Shichang Zou. ieiceee, 16(21):20190454, 2019. [doi]

2017

Degradation induced by TID radiation and hot-carrier stress in 130-nm short channel PDSOI NMOSFETsLihua Dai, Xiaonian Liu, Mengying Zhang, Leqing Zhang, Zhiyuan Hu, Dawei Bi, Zhengxuan Zhang, Shichang Zou. mr, 74:74-80, 2017. [doi]

2016

2014

Investigation of the total dose response of partially depleted SOI nMOSFETs using TCAD simulation and experimentHuixiang Huang, Dawei Bi, Zhengxuan Zhang. mj, 45(6):759-766, 2014. [doi]

Total ionizing dose effect in 0.2 μm PDSOI NMOSFETs with shallow trench isolationChao Peng, Zhiyuan Hu, Zhengxuan Zhang, Huixiang Huang, Bingxu Ning, Dawei Bi. mr, 54(4):730-737, 2014. [doi]

2013

Comprehensive study on the TID effects of 0.13 μm partially depleted SOI NMOSFETsBingxu Ning, Dawei Bi, Huixiang Huang, Zhengxuan Zhang, Ming Chen 0007, Shichang Zou. mj, 44(2):86-93, 2013. [doi]

Bias dependence of TID radiation responses of 0.13 μm partially depleted SOI NMOSFETsBingxu Ning, Dawei Bi, Huixiang Huang, Zhengxuan Zhang, Zhiyuan Hu, Ming Chen 0007, Shichang Zou. mr, 53(2):259-264, 2013. [doi]

2012

Radiation-induced shallow trench isolation leakage in 180-nm flash memory technologyBingxu Ning, Zhengxuan Zhang, Zhangli Liu, Zhiyuan Hu, Ming Chen 0007, Dawei Bi, Shichang Zou. mr, 52(1):130-136, 2012. [doi]

2011

Impact of within-wafer process variability on radiation responseZhiyuan Hu, Zhangli Liu, Hua Shao, Zhengxuan Zhang, Bingxu Ning, Ming Chen, Dawei Bi, Shichang Zou. mj, 42(6):883-888, 2011. [doi]

Total ionizing dose effects in elementary devices for 180-nm flash technologiesZhiyuan Hu, Zhangli Liu, Hua Shao, Zhengxuan Zhang, Bingxu Ning, Ming Chen, Dawei Bi, Shichang Zou. mr, 51(8):1295-1301, 2011. [doi]

Comparison of TID response in core, input/output and high voltage transistors for flash memoryZhangli Liu, Zhiyuan Hu, Zhengxuan Zhang, Hua Shao, Ming Chen, Dawei Bi, Bingxu Ning, Shichang Zou. mr, 51(6):1148-1151, 2011. [doi]

The impact of total ionizing radiation on body effectBingxu Ning, Zhiyuan Hu, Zhengxuan Zhang, Zhangli Liu, Ming Chen 0007, Dawei Bi, Shichang Zou. mj, 42(12):1396-1399, 2011. [doi]

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