Zhangli Liu - researchr alias

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Viewing Publication 1 - 5 from 5

2012

Radiation-induced shallow trench isolation leakage in 180-nm flash memory technologyBingxu Ning, Zhengxuan Zhang, Zhangli Liu, Zhiyuan Hu, Ming Chen 0007, Dawei Bi, Shichang Zou. mr, 52(1):130-136, 2012. [doi]

2011

Impact of within-wafer process variability on radiation responseZhiyuan Hu, Zhangli Liu, Hua Shao, Zhengxuan Zhang, Bingxu Ning, Ming Chen, Dawei Bi, Shichang Zou. mj, 42(6):883-888, 2011. [doi]

Total ionizing dose effects in elementary devices for 180-nm flash technologiesZhiyuan Hu, Zhangli Liu, Hua Shao, Zhengxuan Zhang, Bingxu Ning, Ming Chen, Dawei Bi, Shichang Zou. mr, 51(8):1295-1301, 2011. [doi]

Comparison of TID response in core, input/output and high voltage transistors for flash memoryZhangli Liu, Zhiyuan Hu, Zhengxuan Zhang, Hua Shao, Ming Chen, Dawei Bi, Bingxu Ning, Shichang Zou. mr, 51(6):1148-1151, 2011. [doi]

The impact of total ionizing radiation on body effectBingxu Ning, Zhiyuan Hu, Zhengxuan Zhang, Zhangli Liu, Ming Chen 0007, Dawei Bi, Shichang Zou. mj, 42(12):1396-1399, 2011. [doi]

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