Radiation-induced shallow trench isolation leakage in 180-nm flash memory technology

Bingxu Ning, Zhengxuan Zhang, Zhangli Liu, Zhiyuan Hu, Ming Chen 0007, Dawei Bi, Shichang Zou. Radiation-induced shallow trench isolation leakage in 180-nm flash memory technology. Microelectronics Reliability, 52(1):130-136, 2012. [doi]

Abstract

Abstract is missing.