Shaoyi Peng, Han Zhou, Taeyoung Kim, Hai-Bao Chen, Sheldon X.-D. Tan. Physics-Based Compact TDDB Models for Low-k BEOL Copper Interconnects With Time-Varying Voltage Stressing. IEEE Trans. VLSI Syst., 26(2):239-248, 2018. [doi]
@article{PengZKCT18,
title = {Physics-Based Compact TDDB Models for Low-k BEOL Copper Interconnects With Time-Varying Voltage Stressing},
author = {Shaoyi Peng and Han Zhou and Taeyoung Kim and Hai-Bao Chen and Sheldon X.-D. Tan},
year = {2018},
doi = {10.1109/TVLSI.2017.2764880},
url = {http://doi.ieeecomputersociety.org/10.1109/TVLSI.2017.2764880},
researchr = {https://researchr.org/publication/PengZKCT18},
cites = {0},
citedby = {0},
journal = {IEEE Trans. VLSI Syst.},
volume = {26},
number = {2},
pages = {239-248},
}