Anti-ferroelectric ZrO2, an enabler for low power non-volatile 1T-1C and 1T random access memories - researchr publication authors

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Milan Pesic, M. Hoffmann, C. Richter, Stefan Slesazeck, T. Kampfe, L. M. Eng, Thomas Mikolajick, Uwe Schroeder. Anti-ferroelectric ZrO2, an enabler for low power non-volatile 1T-1C and 1T random access memories. In 47th European Solid-State Device Research Conference, ESSDERC 2017, Leuven, Belgium, September 11-14, 2017. pages 160-163, IEEE, 2017. [doi]

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