Low voltage stress induced leakage current and time to breakdown in ultra-thin (1.2-2.3nm) oxides

C. Petit, D. Zander. Low voltage stress induced leakage current and time to breakdown in ultra-thin (1.2-2.3nm) oxides. Microelectronics Reliability, 47(2-3):401-408, 2007. [doi]

Abstract

Abstract is missing.