D. Zander - researchr alias

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Viewing Publication 1 - 7 from 7

2007

Low voltage stress induced leakage current and time to breakdown in ultra-thin (1.2-2.3nm) oxidesC. Petit, D. Zander. mr, 47(2-3):401-408, 2007. [doi]

Stress induced gate-drain leakage current in ultra-thin gate oxideC. Petit, D. Zander. mr, 47(12):2070-2081, 2007. [doi]

2005

Low voltage SILC and P- and N-MOSFET gate oxide reliabilityC. Petit, A. Meinertzhagen, D. Zander, O. Simonetti, M. Fadlallah, T. Maurel. mr, 45(3-4):479-485, 2005. [doi]

Comparison of interfaces states density through their energy distribution and LVSILC induced by uniform and localized injections in 2.3nm thick oxidesD. Zander. mr, 45(5-6):891-894, 2005. [doi]

2003

Contribution of oxide traps on defect creation and LVSILC conduction in ultra thin gate oxide devicesD. Zander, F. Saigné, A. Meinertzhagen, C. Petit. mr, 43(9-11):1489-1493, 2003. [doi]

2001

High field stress at and above room temperature in 2.3 nm thick oxidesD. Zander, C. Petit, F. Saigné, A. Meinertzhagen. mr, 41(7):1023-1026, 2001. [doi]

Creation and thermal annealing of interface states induced by uniform or localized injection in 2.3nm thick oxidesD. Zander, F. Saigné, A. Meinertzhagen. mr, 41(9-10):1355-1360, 2001.

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