F. Saigné - researchr alias

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Viewing Publication 1 - 4 from 4

2003

Contribution of oxide traps on defect creation and LVSILC conduction in ultra thin gate oxide devicesD. Zander, F. Saigné, A. Meinertzhagen, C. Petit. mr, 43(9-11):1489-1493, 2003. [doi]

2002

Prediction of long-term thermal behavior of an irradiated SRAM based on isochronal annealing measurementsF. Saigné, Olivier Quittard, Laurent Dusseau, F. Joffre, C. Oudéa, J. Fesquet, Jean Gasiot. mr, 42(3):459-461, 2002. [doi]

2001

High field stress at and above room temperature in 2.3 nm thick oxidesD. Zander, C. Petit, F. Saigné, A. Meinertzhagen. mr, 41(7):1023-1026, 2001. [doi]

Creation and thermal annealing of interface states induced by uniform or localized injection in 2.3nm thick oxidesD. Zander, F. Saigné, A. Meinertzhagen. mr, 41(9-10):1355-1360, 2001.

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