Radiation- and Temperature-Induced Fault Modeling and Simulation in BiCMOS LSI's Components using RAD-THERM TCAD Subsystem

Konstantin O. Petrosyants, Maxim Kozhukhov, Dmitry Popov. Radiation- and Temperature-Induced Fault Modeling and Simulation in BiCMOS LSI's Components using RAD-THERM TCAD Subsystem. In 22nd IEEE International Symposium on Design and Diagnostics of Electronic Circuits & Systems, DDECS 2019, Cluj-Napoca, Romania, April 24-26, 2019. pages 1-4, IEEE, 2019. [doi]

@inproceedings{PetrosyantsKP19,
  title = {Radiation- and Temperature-Induced Fault Modeling and Simulation in BiCMOS LSI's Components using RAD-THERM TCAD Subsystem},
  author = {Konstantin O. Petrosyants and Maxim Kozhukhov and Dmitry Popov},
  year = {2019},
  doi = {10.1109/DDECS.2019.8724651},
  url = {https://doi.org/10.1109/DDECS.2019.8724651},
  researchr = {https://researchr.org/publication/PetrosyantsKP19},
  cites = {0},
  citedby = {0},
  pages = {1-4},
  booktitle = {22nd IEEE International Symposium on Design and Diagnostics of Electronic Circuits & Systems, DDECS 2019, Cluj-Napoca, Romania, April 24-26, 2019},
  publisher = {IEEE},
  isbn = {978-1-7281-0073-9},
}