Fault simulation in radiation-hardened SOI CMOS VLSIs using universal compact MOSFET model

Konstantin O. Petrosyants, Lev M. Sambursky, Igor A. Kharitonov, Boris G. Lvov. Fault simulation in radiation-hardened SOI CMOS VLSIs using universal compact MOSFET model. In 17th Latin-American Test Symposium, LATS 2016, Foz do Iguacu, Brazil, April 6-8, 2016. pages 117-122, IEEE, 2016. [doi]

Abstract

Abstract is missing.