Impact of GigaRad Ionizing Dose on 28 nm bulk MOSFETs for future HL-LHC - researchr publication authors

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Alessandro Pezzotta, C.-M. Zhang, F. Jazaeri, C. Bruschini, G. Borghello, F. Faccio, S. Mattiazzo, Andrea Baschirotto, Christian Enz. Impact of GigaRad Ionizing Dose on 28 nm bulk MOSFETs for future HL-LHC. In 46th European Solid-State Device Research Conference, ESSDERC 2016, Lausanne, Switzerland, September 12-15, 2016. pages 146-149, IEEE, 2016. [doi]

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