Impact of GigaRad Ionizing Dose on 28 nm bulk MOSFETs for future HL-LHC

Alessandro Pezzotta, C.-M. Zhang, F. Jazaeri, C. Bruschini, G. Borghello, F. Faccio, S. Mattiazzo, Andrea Baschirotto, Christian Enz. Impact of GigaRad Ionizing Dose on 28 nm bulk MOSFETs for future HL-LHC. In 46th European Solid-State Device Research Conference, ESSDERC 2016, Lausanne, Switzerland, September 12-15, 2016. pages 146-149, IEEE, 2016. [doi]

@inproceedings{PezzottaZJBBFMB16,
  title = {Impact of GigaRad Ionizing Dose on 28 nm bulk MOSFETs for future HL-LHC},
  author = {Alessandro Pezzotta and C.-M. Zhang and F. Jazaeri and C. Bruschini and G. Borghello and F. Faccio and S. Mattiazzo and Andrea Baschirotto and Christian Enz},
  year = {2016},
  doi = {10.1109/ESSDERC.2016.7599608},
  url = {http://dx.doi.org/10.1109/ESSDERC.2016.7599608},
  researchr = {https://researchr.org/publication/PezzottaZJBBFMB16},
  cites = {0},
  citedby = {0},
  pages = {146-149},
  booktitle = {46th European Solid-State Device Research Conference, ESSDERC 2016, Lausanne, Switzerland, September 12-15, 2016},
  publisher = {IEEE},
  isbn = {978-1-5090-2969-3},
}