Effects of Collected Charge and Drain Area on SE Response of SRAMs at the 5-nm FinFET Node - researchr publication

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N. J. Pieper, Yoni Xiong, Dennis R. Ball, J. Pasternak, Bharat L. Bhuva. Effects of Collected Charge and Drain Area on SE Response of SRAMs at the 5-nm FinFET Node. In IEEE International Reliability Physics Symposium, IRPS 2023, Monterey, CA, USA, March 26-30, 2023. pages 1-6, IEEE, 2023. [doi]

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