A 37.8 Mb/mm² SRAM in Intel 18A Technology Featuring a Resistive Supply-Line Write Scheme and Write-Assist With Parallel Boost Injection - researchr publication authors

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Harold Pilo, Manish Arora, Chien-An Lai, Mike Lee, Zack Lo, Mayur Randeria. A 37.8 Mb/mm² SRAM in Intel 18A Technology Featuring a Resistive Supply-Line Write Scheme and Write-Assist With Parallel Boost Injection. IEEE Solid State Circuits Lett., 8:357-360, 2025. [doi]

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