Design-oriented model for short-channel MOS transistors based on inversion charge

Dayana A. Pino-Monroy, Patrick Scheer, Mohamed Khalil Bouchoucha, Carlos Galup-Montoro, Manuel J. Barragan, Jean-Michel Fournier, Andreia Cathelin, Sylvain Bourdel. Design-oriented model for short-channel MOS transistors based on inversion charge. In 14th IEEE Latin America Symposium on Circuits and System, LASCAS 2023, Quito, Ecuador, February 28 - March 3, 2023. pages 1-4, IEEE, 2023. [doi]

Abstract

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