A 4b/cell NROM 1Gb Data-Storage Memory - researchr publication authors

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Y. Polansky, Avi Lavan, Ran Sahar, O. Dadashev, Yoram Betser, G. Cohen, Eduardo Maayan, Boaz Eitan, Ful-Long Ni, Yen-Hui Joseph Ku, Chih-Yuan Lu, Tim Chang-Ting Chen, Chun-Yu Liao, Chin-Hung Chang, Chung Kuang Chen, Wen-Chiao Ho, Yite Shih, Wenchi Ting, Wenpin Lu. A 4b/cell NROM 1Gb Data-Storage Memory. In 2006 IEEE International Solid State Circuits Conference, ISSCC 2006, Digest of Technical Papers, an Francisco, CA, USA, February 6-9, 2006. pages 448-458, IEEE, 2006. [doi]

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