Y. Polansky, Avi Lavan, Ran Sahar, O. Dadashev, Yoram Betser, G. Cohen, Eduardo Maayan, Boaz Eitan, Ful-Long Ni, Yen-Hui Joseph Ku, Chih-Yuan Lu, Tim Chang-Ting Chen, Chun-Yu Liao, Chin-Hung Chang, Chung Kuang Chen, Wen-Chiao Ho, Yite Shih, Wenchi Ting, Wenpin Lu. A 4b/cell NROM 1Gb Data-Storage Memory. In 2006 IEEE International Solid State Circuits Conference, ISSCC 2006, Digest of Technical Papers, an Francisco, CA, USA, February 6-9, 2006. pages 448-458, IEEE, 2006. [doi]
@inproceedings{PolanskyLSDBCME06,
title = {A 4b/cell NROM 1Gb Data-Storage Memory},
author = {Y. Polansky and Avi Lavan and Ran Sahar and O. Dadashev and Yoram Betser and G. Cohen and Eduardo Maayan and Boaz Eitan and Ful-Long Ni and Yen-Hui Joseph Ku and Chih-Yuan Lu and Tim Chang-Ting Chen and Chun-Yu Liao and Chin-Hung Chang and Chung Kuang Chen and Wen-Chiao Ho and Yite Shih and Wenchi Ting and Wenpin Lu},
year = {2006},
doi = {10.1109/ISSCC.2006.1696077},
url = {https://doi.org/10.1109/ISSCC.2006.1696077},
researchr = {https://researchr.org/publication/PolanskyLSDBCME06},
cites = {0},
citedby = {0},
pages = {448-458},
booktitle = {2006 IEEE International Solid State Circuits Conference, ISSCC 2006, Digest of Technical Papers, an Francisco, CA, USA, February 6-9, 2006},
publisher = {IEEE},
isbn = {1-4244-0079-1},
}