SIMS study of silicon oxynitride prepared by oxidation of silicon-rich silicon nitride layer

M.-C. Poon, Y. Gao, T. C. W. Kok, A. M. Myasnikov, Hei Wong. SIMS study of silicon oxynitride prepared by oxidation of silicon-rich silicon nitride layer. Microelectronics Reliability, 41(12):2071-2074, 2001. [doi]

@article{PoonGKMW01,
  title = {SIMS study of silicon oxynitride prepared by oxidation of silicon-rich silicon nitride layer},
  author = {M.-C. Poon and Y. Gao and T. C. W. Kok and A. M. Myasnikov and Hei Wong},
  year = {2001},
  doi = {10.1016/S0026-2714(01)00216-5},
  url = {http://dx.doi.org/10.1016/S0026-2714(01)00216-5},
  tags = {C++},
  researchr = {https://researchr.org/publication/PoonGKMW01},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {41},
  number = {12},
  pages = {2071-2074},
}