Oxide conductivity increase during the progressive-breakdown of SiO2 gate oxides observed with C-AFM

M. Porti, M. Nafría, X. Aymerich. Oxide conductivity increase during the progressive-breakdown of SiO2 gate oxides observed with C-AFM. Microelectronics Reliability, 43(9-11):1501-1505, 2003. [doi]

Authors

M. Porti

This author has not been identified. Look up 'M. Porti' in Google

M. Nafría

This author has not been identified. Look up 'M. Nafría' in Google

X. Aymerich

This author has not been identified. Look up 'X. Aymerich' in Google