Al/HfO2/Si Gate Stack with Improved Physical and Electrical Parameters - researchr publication authors

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Rakesh Prasher, Devi Dass, Rakesh Vaid. Al/HfO2/Si Gate Stack with Improved Physical and Electrical Parameters. In 29th International Conference on VLSI Design and 15th International Conference on Embedded Systems, VLSID 2016, Kolkata, India, January 4-8, 2016. pages 334-337, IEEE Computer Society, 2016. [doi]

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