Rakesh Prasher, Devi Dass, Rakesh Vaid. Al/HfO2/Si Gate Stack with Improved Physical and Electrical Parameters. In 29th International Conference on VLSI Design and 15th International Conference on Embedded Systems, VLSID 2016, Kolkata, India, January 4-8, 2016. pages 334-337, IEEE Computer Society, 2016. [doi]
@inproceedings{PrasherDV16,
title = {Al/HfO2/Si Gate Stack with Improved Physical and Electrical Parameters},
author = {Rakesh Prasher and Devi Dass and Rakesh Vaid},
year = {2016},
doi = {10.1109/VLSID.2016.71},
url = {http://doi.ieeecomputersociety.org/10.1109/VLSID.2016.71},
researchr = {https://researchr.org/publication/PrasherDV16},
cites = {0},
citedby = {0},
pages = {334-337},
booktitle = {29th International Conference on VLSI Design and 15th International Conference on Embedded Systems, VLSID 2016, Kolkata, India, January 4-8, 2016},
publisher = {IEEE Computer Society},
isbn = {978-1-4673-8700-2},
}