Reliability analysis of power gated SRAM under combined effects of NBTI and PBTI in nano-scale CMOS

Anuj Pushkarna, Hamid Mahmoodi. Reliability analysis of power gated SRAM under combined effects of NBTI and PBTI in nano-scale CMOS. In R. Iris Bahar, Fabrizio Lombardi, David Atienza, Erik Brunvand, editors, Proceedings of the 20th ACM Great Lakes Symposium on VLSI 2009, Providence, Rhode Island, USA, May 16-18 2010. pages 373-376, ACM, 2010. [doi]

@inproceedings{PushkarnaM10,
  title = {Reliability analysis of power gated SRAM under combined effects of NBTI and PBTI in nano-scale CMOS},
  author = {Anuj Pushkarna and Hamid Mahmoodi},
  year = {2010},
  doi = {10.1145/1785481.1785567},
  url = {http://doi.acm.org/10.1145/1785481.1785567},
  tags = {analysis, reliability},
  researchr = {https://researchr.org/publication/PushkarnaM10},
  cites = {0},
  citedby = {0},
  pages = {373-376},
  booktitle = {Proceedings of the 20th ACM Great Lakes Symposium on VLSI 2009, Providence, Rhode Island, USA, May 16-18 2010},
  editor = {R. Iris Bahar and Fabrizio Lombardi and David Atienza and Erik Brunvand},
  publisher = {ACM},
  isbn = {978-1-4503-0012-4},
}