Haisheng Qian, Guangxi Hu, Laigui Hu, Xing Zhou, Ran Liu 0001, Li-Rong Zheng. Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices. In Yajie Qin, Zhiliang Hong, Ting-Ao Tang, editors, 12th IEEE International Conference on ASIC, ASICON 2017, Guiyang, China, October 25-28, 2017. pages 249-251, IEEE, 2017. [doi]
Abstract is missing.