Effect of measurement speed (μs-800 ps) on the characterization of reliability behaviors for FDSOI nMOSFETs

Yiming Qu, Ran Cheng, Wei Liu, Junkang Li, Bich-Yen Nguyen, Olivier Faynot, Nuo Xu, Bing Chen, Yi Zhao. Effect of measurement speed (μs-800 ps) on the characterization of reliability behaviors for FDSOI nMOSFETs. In IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018. pages 6, IEEE, 2018. [doi]

Abstract

Abstract is missing.