In-Situ Monitoring of Self-Heating Effect in Aggressively Scaled FinFETs and Its Quantitative Impact on Hot Carrier Degradation Under Dynamic Circuit Operation

Yiming Qu, Jiwu Lu, Junkang Li, Zhuo Chen, Jie Zhang, Chunlong Li, Shiuh-Wuu Lee, Yi Zhao. In-Situ Monitoring of Self-Heating Effect in Aggressively Scaled FinFETs and Its Quantitative Impact on Hot Carrier Degradation Under Dynamic Circuit Operation. In 2020 IEEE International Reliability Physics Symposium, IRPS 2020, Dallas, TX, USA, April 28 - May 30, 2020. pages 1-6, IEEE, 2020. [doi]

Abstract

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