Polarity Dependency and 1/E Model of Gate Oxide TDDB Degradation in 3D NAND

Lina Qu, Shengwei Yang, Ming He, Rui Fang, XiaoJuan Zhu, Kun Han, Yi He. Polarity Dependency and 1/E Model of Gate Oxide TDDB Degradation in 3D NAND. In IEEE International Reliability Physics Symposium, IRPS 2023, Monterey, CA, USA, March 26-30, 2023. pages 1-4, IEEE, 2023. [doi]

Abstract

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