Dynamic Reference Voltage Sensing Scheme for Read Margin Improvement in STT-MRAMs

Kien Trinh Quang, Sergio Ruocco, Massimo Alioto. Dynamic Reference Voltage Sensing Scheme for Read Margin Improvement in STT-MRAMs. IEEE Trans. on Circuits and Systems, 65-I(4):1269-1278, 2018. [doi]

Authors

Kien Trinh Quang

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Sergio Ruocco

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Massimo Alioto

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