Kien Trinh Quang, Sergio Ruocco, Massimo Alioto. Dynamic Reference Voltage Sensing Scheme for Read Margin Improvement in STT-MRAMs. IEEE Trans. on Circuits and Systems, 65-I(4):1269-1278, 2018. [doi]
@article{QuangRA18,
title = {Dynamic Reference Voltage Sensing Scheme for Read Margin Improvement in STT-MRAMs},
author = {Kien Trinh Quang and Sergio Ruocco and Massimo Alioto},
year = {2018},
doi = {10.1109/TCSI.2017.2749522},
url = {https://doi.org/10.1109/TCSI.2017.2749522},
researchr = {https://researchr.org/publication/QuangRA18},
cites = {0},
citedby = {0},
journal = {IEEE Trans. on Circuits and Systems},
volume = {65-I},
number = {4},
pages = {1269-1278},
}