Enabling 3D NAND Trench Cells for Scaled Flash Memories

S. Rachidi, S. Ramesh, L. Breuil, Z. Tao, Devin Verreck, G. L. Donadio, Antonio Arreghini, G. Van den bosch, Maarten Rosmeulen. Enabling 3D NAND Trench Cells for Scaled Flash Memories. In IEEE International Memory Workshop, IMW 2023, Monterey, CA, USA, May 21-24, 2023. pages 1-4, IEEE, 2023. [doi]

@inproceedings{RachidiRBTVDABR23,
  title = {Enabling 3D NAND Trench Cells for Scaled Flash Memories},
  author = {S. Rachidi and S. Ramesh and L. Breuil and Z. Tao and Devin Verreck and G. L. Donadio and Antonio Arreghini and G. Van den bosch and Maarten Rosmeulen},
  year = {2023},
  doi = {10.1109/IMW56887.2023.10145992},
  url = {https://doi.org/10.1109/IMW56887.2023.10145992},
  researchr = {https://researchr.org/publication/RachidiRBTVDABR23},
  cites = {0},
  citedby = {0},
  pages = {1-4},
  booktitle = {IEEE International Memory Workshop, IMW 2023, Monterey, CA, USA, May 21-24, 2023},
  publisher = {IEEE},
  isbn = {978-1-6654-7459-7},
}