A new Tunnel-FET based RAM concept for ultra-low power applications - researchr publication authors

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Mostafizur Rahman, Mingyu Li, Jiajun Shi, Santosh Khasanvis, Csaba Andras Moritz. A new Tunnel-FET based RAM concept for ultra-low power applications. In IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2014, Paris, France, July 8-10, 2014. pages 57-58, IEEE, 2014. [doi]

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