Mostafizur Rahman, Mingyu Li, Jiajun Shi, Santosh Khasanvis, Csaba Andras Moritz. A new Tunnel-FET based RAM concept for ultra-low power applications. In IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2014, Paris, France, July 8-10, 2014. pages 57-58, IEEE, 2014. [doi]
@inproceedings{RahmanLSKM14,
title = {A new Tunnel-FET based RAM concept for ultra-low power applications},
author = {Mostafizur Rahman and Mingyu Li and Jiajun Shi and Santosh Khasanvis and Csaba Andras Moritz},
year = {2014},
doi = {10.1109/NANOARCH.2014.6880505},
url = {http://dx.doi.org/10.1109/NANOARCH.2014.6880505},
researchr = {https://researchr.org/publication/RahmanLSKM14},
cites = {0},
citedby = {0},
pages = {57-58},
booktitle = {IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2014, Paris, France, July 8-10, 2014},
publisher = {IEEE},
isbn = {978-1-4799-6383-6},
}