Process Variation Tolerant FinFET Based Robust Low Power SRAM Cell Design at 32 nm Technology - researchr publication authors

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Balwinder Raj, Jatin Mitra, Deepak Kumar Bihani, V. Rangharajan, Ashok K. Saxena, Sudeb Dasgupta. Process Variation Tolerant FinFET Based Robust Low Power SRAM Cell Design at 32 nm Technology. J. Low Power Electronics, 7(2):163-171, 2011. [doi]

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