Process Variation Tolerant FinFET Based Robust Low Power SRAM Cell Design at 32 nm Technology

Balwinder Raj, Jatin Mitra, Deepak Kumar Bihani, V. Rangharajan, Ashok K. Saxena, Sudeb Dasgupta. Process Variation Tolerant FinFET Based Robust Low Power SRAM Cell Design at 32 nm Technology. J. Low Power Electronics, 7(2):163-171, 2011. [doi]

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