Soft error study in double gated FinFET-based SRAM cells with simultaneous and independent driven gates

V. N. Ramakrishnan, R. Srinivasan. Soft error study in double gated FinFET-based SRAM cells with simultaneous and independent driven gates. Microelectronics Journal, 43(11):888-893, 2012. [doi]

Abstract

Abstract is missing.