Time gating imaging through thick silicon substrate: a new step towards backside characterisation

J. M. Rampnoux, H. Michel, M. Amine Salhi, Stéphane Grauby, Wilfrid Claeys, Stefan Dilhaire. Time gating imaging through thick silicon substrate: a new step towards backside characterisation. Microelectronics Reliability, 46(9-11):1520-1524, 2006. [doi]

Abstract

Abstract is missing.