28nm FDSOI technology sub-0.6V SRAM Vmin assessment for ultra low voltage applications

R. Ranica, Nicolas Planes, Vincent Huard, Olivier Weber, D. Noblet, Damien Croain, F. Giner, S. Naudet, P. Mergault, S. Ibars, A. Villaret, M. Parra, S├ębastien Haendler, M. Quoirin, Florian Cacho, C. Julien, F. Terrier, Lorenzo Ciampolini, David Turgis, Christophe Lecocq, Franck Arnaud. 28nm FDSOI technology sub-0.6V SRAM Vmin assessment for ultra low voltage applications. In 2016 IEEE Symposium on VLSI Circuits, VLSIC 2016, Honolulu, HI, USA, June 15-17, 2016. pages 1-2, IEEE, 2016. [doi]

Abstract

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