Trap Density Modulation for IO FinFET NBTI Improvement

Rakesh Ranjan, Charles B. LaRow, Ki-Don Lee, Minhyo Kang, Pavitra R. Perepa, Md. Shahriar Rahman, Bong-Ki Lee, David Moreau, Carolyn Cariss-Daniels, Timothy Basford, Colby Callahan, Maihan Nguyen, Gil Heyun Choi, Hyunchul Sagong, Hwasung Rhee. Trap Density Modulation for IO FinFET NBTI Improvement. In 2020 IEEE International Reliability Physics Symposium, IRPS 2020, Dallas, TX, USA, April 28 - May 30, 2020. pages 1-5, IEEE, 2020. [doi]

@inproceedings{RanjanLLKPRLMCB20,
  title = {Trap Density Modulation for IO FinFET NBTI Improvement},
  author = {Rakesh Ranjan and Charles B. LaRow and Ki-Don Lee and Minhyo Kang and Pavitra R. Perepa and Md. Shahriar Rahman and Bong-Ki Lee and David Moreau and Carolyn Cariss-Daniels and Timothy Basford and Colby Callahan and Maihan Nguyen and Gil Heyun Choi and Hyunchul Sagong and Hwasung Rhee},
  year = {2020},
  doi = {10.1109/IRPS45951.2020.9129066},
  url = {https://doi.org/10.1109/IRPS45951.2020.9129066},
  researchr = {https://researchr.org/publication/RanjanLLKPRLMCB20},
  cites = {0},
  citedby = {0},
  pages = {1-5},
  booktitle = {2020 IEEE International Reliability Physics Symposium, IRPS 2020, Dallas, TX, USA, April 28 - May 30, 2020},
  publisher = {IEEE},
  isbn = {978-1-7281-3199-3},
}