Investigation of resistance fluctuations in ReRAM: physical origin, temporal dependence and impact on memory reliability

L. Reganaz, Damien Deleruyelle, Quentin Rafhay, Joel Minguet Lopez, Niccolo Castellani, Jean-François Nodin, Alessandro Bricalli, Giuseppe Piccolboni, Gabriel Molas, François Andrieu. Investigation of resistance fluctuations in ReRAM: physical origin, temporal dependence and impact on memory reliability. In IEEE International Reliability Physics Symposium, IRPS 2023, Monterey, CA, USA, March 26-30, 2023. pages 1-6, IEEE, 2023. [doi]

Abstract

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