New insights into the HCI degradation of pass-gate transistor in advanced FinFET technology - researchr publication authors

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Pengpeng Ren, Changze Liu, Sanping Wan, Jiayang Zhang, Zhuoqing Yu, Nie Liu, Yongsheng Sun, Runsheng Wang, Canhui Zhan, Zhenghao Gan, Waisum Wong, Yu Xia, Ru Huang. New insights into the HCI degradation of pass-gate transistor in advanced FinFET technology. In IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018. pages 3-1, IEEE, 2018. [doi]

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