Pengpeng Ren, Changze Liu, Sanping Wan, Jiayang Zhang, Zhuoqing Yu, Nie Liu, Yongsheng Sun, Runsheng Wang, Canhui Zhan, Zhenghao Gan, Waisum Wong, Yu Xia, Ru Huang. New insights into the HCI degradation of pass-gate transistor in advanced FinFET technology. In IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018. pages 3-1, IEEE, 2018. [doi]
@inproceedings{RenLWZYLSWZGWXH18,
title = {New insights into the HCI degradation of pass-gate transistor in advanced FinFET technology},
author = {Pengpeng Ren and Changze Liu and Sanping Wan and Jiayang Zhang and Zhuoqing Yu and Nie Liu and Yongsheng Sun and Runsheng Wang and Canhui Zhan and Zhenghao Gan and Waisum Wong and Yu Xia and Ru Huang},
year = {2018},
doi = {10.1109/IRPS.2018.8353656},
url = {https://doi.org/10.1109/IRPS.2018.8353656},
researchr = {https://researchr.org/publication/RenLWZYLSWZGWXH18},
cites = {0},
citedby = {0},
pages = {3},
booktitle = {IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018},
publisher = {IEEE},
isbn = {978-1-5386-5479-8},
}