Hot-carrier reliability of 20V MOS transistors in 0.13 mum CMOS technology

Yannick Rey-Tauriac, J. Badoc, B. Reynard, R. A. Bianchi, D. Lachenal, A. Bravaix. Hot-carrier reliability of 20V MOS transistors in 0.13 mum CMOS technology. Microelectronics Reliability, 45(9-11):1349-1354, 2005. [doi]

@article{Rey-TauriacBRBLB05,
  title = {Hot-carrier reliability of 20V MOS transistors in 0.13 mum CMOS technology},
  author = {Yannick Rey-Tauriac and J. Badoc and B. Reynard and R. A. Bianchi and D. Lachenal and A. Bravaix},
  year = {2005},
  doi = {10.1016/j.microrel.2005.07.019},
  url = {http://dx.doi.org/10.1016/j.microrel.2005.07.019},
  tags = {reliability},
  researchr = {https://researchr.org/publication/Rey-TauriacBRBLB05},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {45},
  number = {9-11},
  pages = {1349-1354},
}