ESD characterization of multi-finger RF nMOSFET transistors by TLP and transient interferometric mapping technique - researchr publication authors

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Matteo Rigato, Clément Fleury, Michael Heer, Mattia Capriotti, Werner Simbürger, Dionyz Pogany. ESD characterization of multi-finger RF nMOSFET transistors by TLP and transient interferometric mapping technique. Microelectronics Reliability, 55(9-10):1471-1475, 2015. [doi]

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