Enhanced Threshold Voltage Stability in ZnO Thin-Film-Transistors by Excess of Oxygen in Atomic Layer Deposited Al2O3

Rodolfo A. Rodriguez-Davila, R. A. Chapman, M. Catalano, Manuel Quevedo-Lopez, C. D. Young. Enhanced Threshold Voltage Stability in ZnO Thin-Film-Transistors by Excess of Oxygen in Atomic Layer Deposited Al2O3. In 2020 IEEE International Reliability Physics Symposium, IRPS 2020, Dallas, TX, USA, April 28 - May 30, 2020. pages 1-5, IEEE, 2020. [doi]

@inproceedings{Rodriguez-Davila20,
  title = {Enhanced Threshold Voltage Stability in ZnO Thin-Film-Transistors by Excess of Oxygen in Atomic Layer Deposited Al2O3},
  author = {Rodolfo A. Rodriguez-Davila and R. A. Chapman and M. Catalano and Manuel Quevedo-Lopez and C. D. Young},
  year = {2020},
  doi = {10.1109/IRPS45951.2020.9129345},
  url = {https://doi.org/10.1109/IRPS45951.2020.9129345},
  researchr = {https://researchr.org/publication/Rodriguez-Davila20},
  cites = {0},
  citedby = {0},
  pages = {1-5},
  booktitle = {2020 IEEE International Reliability Physics Symposium, IRPS 2020, Dallas, TX, USA, April 28 - May 30, 2020},
  publisher = {IEEE},
  isbn = {978-1-7281-3199-3},
}