Enhanced Threshold Voltage Stability in ZnO Thin-Film-Transistors by Excess of Oxygen in Atomic Layer Deposited Al2O3

Rodolfo A. Rodriguez-Davila, R. A. Chapman, M. Catalano, Manuel Quevedo-Lopez, C. D. Young. Enhanced Threshold Voltage Stability in ZnO Thin-Film-Transistors by Excess of Oxygen in Atomic Layer Deposited Al2O3. In 2020 IEEE International Reliability Physics Symposium, IRPS 2020, Dallas, TX, USA, April 28 - May 30, 2020. pages 1-5, IEEE, 2020. [doi]

Abstract

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