A 65 nm, 850 MHz, 256 kbit, 4.3 pJ/access, ultra low leakage power memory using dynamic cell stability and a dual swing data link - researchr publication

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Bram Rooseleer, Stefan Cosemans, Wim Dehaene. A 65 nm, 850 MHz, 256 kbit, 4.3 pJ/access, ultra low leakage power memory using dynamic cell stability and a dual swing data link. In Proceedings of the 37th European Solid-State Circuits Conference, ESSCIRC 2011, Helsinki, Finland, Sept. 12-16, 2011. pages 519-522, IEEE, 2011. [doi]

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