Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences

Isabella Rossetto, Fabiana Rampazzo, Simone Gerardin, Matteo Meneghini, Marta Bagatin, Alberto Zanandrea, Alessandro Paccagnella, Gaudenzio Meneghesso, Enrico Zanoni, Christian Dua, Marie-Antoinette di Forte-Poisson, Raphael Aubry, Mourad Oualli, Sylvain L. Delage. Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences. In 44th European Solid State Device Research Conference, ESSDERC 2014, Venice Lido, Italy, September 22-26, 2014. pages 381-384, IEEE, 2014. [doi]

@inproceedings{RossettoRGMBZPMZDFAOD14,
  title = {Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences},
  author = {Isabella Rossetto and Fabiana Rampazzo and Simone Gerardin and Matteo Meneghini and Marta Bagatin and Alberto Zanandrea and Alessandro Paccagnella and Gaudenzio Meneghesso and Enrico Zanoni and Christian Dua and Marie-Antoinette di Forte-Poisson and Raphael Aubry and Mourad Oualli and Sylvain L. Delage},
  year = {2014},
  doi = {10.1109/ESSDERC.2014.6948840},
  url = {http://dx.doi.org/10.1109/ESSDERC.2014.6948840},
  researchr = {https://researchr.org/publication/RossettoRGMBZPMZDFAOD14},
  cites = {0},
  citedby = {0},
  pages = {381-384},
  booktitle = {44th European Solid State Device Research Conference, ESSDERC 2014, Venice Lido, Italy, September 22-26, 2014},
  publisher = {IEEE},
  isbn = {978-1-4799-4378-4},
}