Mixture of negative bias temperature instability and hot-carrier driven threshold voltage degradation of 130 nm technology p-channel transistors

Gunnar Andreas Rott, Karina Rott, Hans Reisinger, Wolfgang Gustin, Tibor Grasser. Mixture of negative bias temperature instability and hot-carrier driven threshold voltage degradation of 130 nm technology p-channel transistors. Microelectronics Reliability, 54(9-10):2310-2314, 2014. [doi]

Authors

Gunnar Andreas Rott

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Karina Rott

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Hans Reisinger

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Wolfgang Gustin

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Tibor Grasser

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