Mixture of negative bias temperature instability and hot-carrier driven threshold voltage degradation of 130 nm technology p-channel transistors - researchr publication

researchr

You are not signed in
Sign in
Sign up

Gunnar Andreas Rott, Karina Rott, Hans Reisinger, Wolfgang Gustin, Tibor Grasser. Mixture of negative bias temperature instability and hot-carrier driven threshold voltage degradation of 130 nm technology p-channel transistors. Microelectronics Reliability, 54(9-10):2310-2314, 2014. [doi]

Abstract is missing.

runs on WebDSL