Gunnar Andreas Rott, Karina Rott, Hans Reisinger, Wolfgang Gustin, Tibor Grasser. Mixture of negative bias temperature instability and hot-carrier driven threshold voltage degradation of 130 nm technology p-channel transistors. Microelectronics Reliability, 54(9-10):2310-2314, 2014. [doi]
@article{RottRRGG14,
title = {Mixture of negative bias temperature instability and hot-carrier driven threshold voltage degradation of 130 nm technology p-channel transistors},
author = {Gunnar Andreas Rott and Karina Rott and Hans Reisinger and Wolfgang Gustin and Tibor Grasser},
year = {2014},
doi = {10.1016/j.microrel.2014.07.040},
url = {http://dx.doi.org/10.1016/j.microrel.2014.07.040},
researchr = {https://researchr.org/publication/RottRRGG14},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {54},
number = {9-10},
pages = {2310-2314},
}