Ka-Band Stacked Power Amplifier on 22 nm CMOS FDSOI Technology Utilizing Back-Gate Bias for Linearity Improvement - researchr publication authors

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Jere Rusanen, Mikko Hietanen, Alok Sethi, Timo Rahkonen, Aarno Pärssinen, Janne P. Aikio. Ka-Band Stacked Power Amplifier on 22 nm CMOS FDSOI Technology Utilizing Back-Gate Bias for Linearity Improvement. In Jari Nurmi, Peeter Ellervee, Kari Halonen, Juha Röning, editors, 2019 IEEE Nordic Circuits and Systems Conference, NORCAS 2019: NORCHIP and International Symposium of System-on-Chip (SoC), Helsinki, Finland, October 29-30, 2019. pages 1-4, IEEE, 2019. [doi]

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